Expert Witness Code 0845
|
Professional Summary: This Ph.D. has over 28 years of experience in the semiconductor industry,with a specific emphasis on the physics of semiconductor devices. He held technical positions at Stanford University, Purdue University, and the German Space Agency in Stuttgart-Vaihingen, Germany. For over 25 years he has worked in the semiconductor industry, first at Siemens and then at Motorola, whose semiconductor division later became Freescale Semiconductor. Since 2008 he has been a Professor at Virginia Tech, where he continues his research in semiconductor device physics and technology.
His research in semiconductor device physics at Motorola had a specific emphasis on non-volatile memories and associated physical effects, such as band-to-band tunneling. In 1990, he was the first to simulate band-to-band tunneling in MOSFETs, and correctly predicted new modes of tunneling. In addition, he researched the impact of band-to-band tunneling on non-volatile memories. In addition to conducting research in semiconductor physics, he successfully managed the development of several technologies, like a 50nm fully depleted silicon-insulator (SOI) MOSFET with TiN/HfO2 gate stack,and a 30nm gate length SOI MOSFET.
This Ph.D. is the lead inventor on most of the 109 patents issued, and has over 240 publications in scientific journals and conference proceedings. |
Expertise:
|
Additional Information:
- Ph.D., Theoretical Nuclear Physics - Tuebingen University, Germany
- Masters, Experimental Superconductivity Physics (magna cum laude) - Tuebingen University, Germany
- B.S., Business Administration - Tuebingen University, Germany
|
To Hire This Expert call 1-866-873-7890 (Ext. 220) or
Email Us |
|