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Expert Witness Code 9076
Professional Summary:

This Ph.D. has over 40years of experience in semiconductor devices and integrated circuit technology and research.  While at Stanford University he led the development of the SUPREM process simulator, the first computer aided design tool focused on silicon  semiconductor devices and integrated circuit technology.  Derivatives of this program are still in widespread use in the semiconductor industry today.  In subsequent years, he made several significant contributions to the physical understanding and modeling of semiconductor fabrication processes such as dopant diffusion.  His current research focuses on the physics and technology of advanced nanoscale electronic devices with novel materials and structures.

He has made seminal contributions to the understanding of point defect mechanisms in atomic diffusion in silicon, a key process in the fabrication of electronic devices.  In the late 70's, he pioneered experimental methods that led to the first proof and subsequent quantitative characterization of the dual, vacancy - interstitially diffusion mechanisms of common dopant atoms in silicon. Then, in the early 80's he pioneered experimental field-effect nanostructures that became the basis for many investigations jointly with colleagues and students at MIT, of quantum effects in electron transport in ultra-small silicon and III-V field effect devices. Several firsts, including lateral surface superlattice, quasi-one dimensional density of states, and single-electron transistor demonstrations resulted from this work.  In parallel he led research that in 1985 resulted in sub-100-nm MOSFETs and the first demonstration of source to channel electron injection velocities exceeding the saturation velocity.  This early work along with his subsequent studies of highly non-uniform channel doping, and more recent experimental studies of Silicon on Insulator transistors have contributed to the groundwork for today's high performance silicon MOSFETs.

Expertise:
  • Nanoscale Si, SOI and Si/SiGe MOSFETs
  • Semiconductor Device Fabrication
  • Semiconductor Devices and Integrated Circuit Technology
  • Thin-Film Semiconductor Technology and Devices
Additional Information:
  • Ph.D., Electrical Engineering
  • B.S., Physics

Expert Witness Services:

  • Technical Consultant
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